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TT Technology Ltd.

Products >> KST DDR3 1333MHZ 1GB Memory Ram

KST DDR3 1333MHZ 1GB Memory Ram

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Description
Product Name: KST DDR3 1333MHZ 1GB Memory Ram
Supply Ability:
Related proudcts memory,
Specifications KST DDR3 1333MHZ 1GB Memory Ram
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***ailed profile
Item Name:
DDR3 Ram 1333Mhz 1GB desktop computer memory module
DDR3 1333MHZ (PC3-10660) 1GB
1GB 1333MHz DDR3 Non-ECC CL9 DIMM
DDR3 1333Mhz (PC3-10660) 1GB 240Pins Long dimm / Desktop ram
Brief description:
DDR3 Ram 1333Mhz 1GB
1GB 1333MHz DDR3 Non-ECC CL9 DIMM
Part No.: KVR1333D3N9/1G
Full co***tibility Intel motherboard
Original Chip: MT Hynix Samsung Elpida
RMA rate less 1%
5 years warranty

Specifications:
Memory Type: DDR3
Memory Speed: 1333Mhz DDR3
Memory Size: 1GB/1024MB
Memory Channels: Dual
Memory Socket: LONG DIMM
Memory CAS Latency: 4-4-4-12
Memory Timing:4-4-4-12
Pins:240
Voltage:1.5V
Function: Non ECC Memory
Chips: Hynix. Elpida. Micron. Samgsung. Infineon
Package ***ail: Retail packing or bulk packing
Delivery Date: 2-3 working days after buyer's payment is verified.
Tested ***ails:
This describes ValueRAM's 128M x 64-bit 1GB (1024MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM)
memory module, based on eight 128M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC
standard latency 1333Mhz timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V.
The electrical and mechanical specifications are as follows:

FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 9(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address �00�only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
1066Mbps CL7 do

Contact Us
Company: TT Technology Ltd.
Contact: Ms. Phoebe Kowk
Address: Room No.: 1210,12th Floor, West 4 Block SEG Technology Park,Huaqiang Road(North), Futian District
Postcode:
Tel: 0086-13760338412
Fax: 0086-13760338412
E-mail:         


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Tel : 0086-13760338412 Fax : 0086-13760338412
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